Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing

Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memory

0038-1101/$ see front matter 2013 Elsevier Ltd. A http://dx.doi.org/10.1016/j.sse.2013.02.017 ⇑ Corresponding author. E-mail addresses: [email protected] (H iue.tuwien.ac.at (T. Windbacher), [email protected] [email protected] (S. Selberherr). As the feature size of CMOS components scales down, the standby power losses due to high leakage currents have become a top concern for moder...

Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory

We present experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions. The experiments show that, for MgObased magnetic tunnelling junctions, the tunnelling magnetoresistance ratio is as large as 155% and the intrinsic switching current density is as low as 1.1× 10 A cm. The thermal effect and current pulse width on spin-transfer magnetization swit...

Magnetoresistance and spin-transfer torque in magnetic tunnel junctions

We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also be the first device geometry in which spin-torque effects are applied to manipulate magnetic dynamics, in order to make non-volatile magnetic random access ...

Material for : “ Measurement of the Spin - Transfer - Torque Vector in Magnetic Tunnel Junctions ”

Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates

Recently, magnetic tunnel junction (MTJ)-based implication logic gates have been proposed to realize a fundamental Boolean logic operation called material implication (IMP). For given MTJ characteristics, the IMP gate circuit parameters must be optimized to obtain the minimum IMP error probability. In this work we present the optimization method and investigate the effect of MTJ device paramete...